| PART |
Description |
Maker |
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| ENE361D-10A ENE391D-14A ENE361D-07A ENE391D-05A EN |
Z-TRAP ENE series
|
Fuji Electric
|
| XT4.60MW XT4.60MWP XT5.57MW XT5.65MW XT4.47MW XT4. |
XT MW Double Type Trap Filters
|
Token Electronics Industry Co., Ltd.
|
| 114C1-075FR6 114C3-075FR6 117C4-075FR7 |
TRAP REMOTE CONTROL SYSTEMS (SW ADDRESSING)
|
rfsolutions.ltd
|
| B1821BH075C300N B1821BH075C275N B1821BH038C275N B1 |
Cap Screws Cont
|
Fastenal
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 0521511210 |
2.00mm (.079") Pitch Wire Trap, Pull-Cover Style, Right Angle, 12 Circuits
|
Molex Electronics Ltd.
|
| 0521511110 52151-1110 |
2.00mm (.079") Pitch Wire Trap, Pull-Cover Style, Right Angle, 11 Circuits
2.00mm (.079) Pitch Wire Trap, Pull-Cover Style, Right Angle, 11 Circuits
|
Molex Electronics Ltd.
http://
|
| 52004-1210 0520041210 |
1.50mm (.059") Pitch Wire Trap, Push-Cover Style, Vertical, 12 Circuits
1.50mm (.059) Pitch Wire Trap, Push-Cover Style, Vertical, 12 Circuits
|
Molex Electronics Ltd.
|
